v-beam

基本解釋

K-V beam through an axisymmetric uniform-focusing channel is studied in a particle-core model.
采用粒子-束核模型，對(duì)均勻聚焦磁場(chǎng)中滿足K-V分布的離子束進(jìn)行模擬研究。
Based on the result of simulation, the V-shaped beam thermal micro-actuator array is fabricated on a SOI wafer by DRIE.
根據(jù)模擬結(jié)果，采用SOI硅片和微細(xì)加工DRIE技術(shù)制作了這種V型梁微執(zhí)行器并聯(lián)陣列。
A formula for calculating K1 of a V-notched beam under arbitrary span three points bending is given by the use of superposition techniques.
本文利用疊加原理，給出一適應(yīng)于任意跨距三點(diǎn)彎曲V形切口梁的應(yīng)力強(qiáng)度因子的計(jì)算公式。