p-type

基本解釋

N type and P type 4＂-6＂silicon epitaxial wafers.
4＂-6＂N型和P型各類硅外延片。
High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation.
使用高真空電子束蒸發(fā)在p型Si(1 0 0 )襯底上制備了高kHfO2 薄膜 .
Dietl et al. predicted that p type Mn doped ZnO could have ferromagnetism at room temperature.
Dietl等人的理論計算預測，p型摻雜(Zn,Mn)O可能具有室溫鐵磁性。
P type CIS and CIGS thin films are fabricated by evaporating selenylation method,and so are N type CdS. They compose heterogeneity PN junction solar cells.
采用蒸發(fā)硒化方法制備了P型CIS(銅銦硒 )和CIGS(銅銦鎵硒 )薄膜 ,用蒸發(fā)法制備N型CdS(硫化鎘 ) ,二者組成異質(zhì)PN結(jié)太陽電池。
But there are many basic problems waiting for investigating,for example, high qulity bulk ZnO crystals growth、stable p type doping realiztion、good schottky contact making,etc.
然而現(xiàn)在生長大塊的ZnO體單晶，制得高質(zhì)量的ZnO薄膜，實現(xiàn)穩(wěn)定可靠的P型摻雜，做出重復性好熱穩(wěn)定性好的金屬ZnO肖特基接觸歐姆接觸的技術(shù)成為亟待解決的問題。