PHEMT

基本解釋

• 贗配高電子遷移率晶體管

同根派生

• PHEMT相關(guān)詞

英漢例句

• PHEMT transistor(ATF-35143) is used in this design.
  設(shè)計(jì)采用了PHEMT晶體管(ATF-35143)。
• Subsequently analyzing the principle of broadband matching technology with GaAs PHEMT model and S-paramter .
  結(jié)合GaAs PHEMT模型和S端口參數(shù)分析了寬頻帶匹配技術(shù)的原理;
• This article will describe followsings: Analyzed the basic physical model of pHEMT such as carrier mobility, carrier generation and recombination models.
  本論文的主要工作是： 分析了諸如載流子遷移率模型、產(chǎn)生復(fù)合模型等pHEMT的基本物理模型以及基本工作原理；
• Commercial GaAs pHEMT transistors, Agilent ATF-35143, were used in this 2-stage amplifier. At a physical temperature 15K the amplifier achieves noise temperature between 3.2K and 3.8K over 1600MHz to 1740MHz band.
  該放大器采用了Agilent 公司ATF-35143 假晶高電子遷移率場(chǎng)效應(yīng)管(pHEMT),為兩級(jí)級(jí)聯(lián)結(jié)構(gòu),頻率范圍1600MHz~1740MHz。
• The representativemanufacturing process of pHEMT and discussed such as mesa insulates process,electrode process, photoetching process, metal lift-off process passivation, andselective-wet etching process. Two special topic are founded on?
  對(duì)pHEMT MMIC典型工藝制作技術(shù)如臺(tái)面隔離技術(shù)、電極形成技術(shù)、光刻技術(shù)、金屬剝離技術(shù)、鈍化技術(shù)以及柵凹槽的選擇性濕法腐蝕技術(shù)進(jìn)行了研究，同時(shí)將“多層材料結(jié)構(gòu)的選擇性濕法腐蝕技術(shù)”以及“氮化硅鈍化保護(hù)工藝對(duì)pHEMT性能的影響”作為專題，進(jìn)行詳細(xì)研究探討，研究結(jié)果如下：

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